Theory of a Scanning Tunneling Microscope with a Two-Protrusion Tip

We consider a scanning tunneling microscope (STM) such that tunneling occurs through two atomically sharp protrusions on its tip. When the two protrusions are separated by at least several atomic spacings, the differential conductance of this STM depends on the electronic transport in the sample between the protrusions. Furthermore two-protrusion tips commonly occur during STM tip preparation. We explore possible applications to probing dynamical impurity potentials on a metallic surface and local transport in an anisotropic superconductor.Comment: revtex, 11 pages, 6 figures upon reques

Quantitative LSPR Imaging for Biosensing with Single Nanostructure Resolution

AbstractLocalized surface plasmon resonance (LSPR) imaging has the potential to map complex spatio-temporal variations in analyte concentration, such as those produced by protein secretions from live cells. A fundamental roadblock to the realization of such applications is the challenge of calibrating a nanoscale sensor for quantitative analysis. Here, we introduce a new, to our knowledge, LSPR imaging and analysis technique that enables the calibration of hundreds of individual gold nanostructures in parallel. The calibration allowed us to map the fractional occupancy of surface-bound receptors at individual nanostructures with nanomolar sensitivity and a temporal resolution of 225 ms. As a demonstration of the technique’s applicability to molecular and cell biology, the calibrated array was used for the quantitative LSPR imaging of anti-c-myc antibodies harvested from a cultured 9E10 hybridoma cell line without the need for further purification or processing

An Arabidopsis cell wall-associated kinase required for invertase activity and cell growth

The wall-associated kinases (WAK), a family of five proteins that contain extracellular domains that can be linked to pectin molecules of the cell wall, span the plasma membrane and have a cytoplasmic serine/threonine kinase domain. Previous work has shown that a reduction in WAK protein levels leads to a loss of cell expansion, indicating that these receptor-like proteins have a role in cell shape formation. Here it is shown that a single wak2 mutation exhibits a dependence on sugars and salts for seedling growth. This mutation also reduces the expression and activity of vacuolar invertase, often a key factor in turgor and expansion. WAKs may thus provide a molecular mechanism linking cell wall sensing (via pectin attachment) to regulation of solute metabolism, which in turn is known to be involved in turgor maintenance in growing cells. © 2006 The Authors

Local Electronic Structure of a Single Magnetic Impurity in a Superconductor

The electronic structure near a single classical magnetic impurity in a superconductor is determined using a fully self-consistent Koster-Slater algorithm. Localized excited states are found within the energy gap which are half electron and half hole. Within a jellium model we find the new result that the spatial structure of the positive-frequency (electron-like) spectral weight (or local density of states), can differ strongly from that of the negative frequency (hole-like) spectral weight. The effect of the impurity on the continuum states above the energy gap is calculated with good spectral resolution for the first time. This is also the first three-dimensional self-consistent calculation for a strong magnetic impurity potential.Comment: 13 pages, RevTex, change in heuristic picture, no change in numerical result

Koinonia

Best Practices FeaturesStudents of Concern Committee: Coordinating Care, Connie Horton and Mark Davis Want to Change Student Culture on Your Campus? Do the CORE!, Eric Lowdermilk Spotlight FeaturesYou Only Get 1 Up, Justin Heth and Caleb Farmer The Season, Sharon Virkler Book ReviewsThe Future of Christian Learning: An Evangelical and Catholic Dialogue (by Mark Noll and James Turner), reviewed by Philip D. Byers Restoring Rebecca: A Story of Traumatic Stress, Caregiving and the Unmasking of a Superhero (by Christopher Marchand), reviewed by David M. Johnstone A Review of Culture Making: Recovering our Creative Calling (by Andy Crouch), reviewed by Jeff Rioux Revisiting How Minority Students Experience College: Implications for Planning and Policy (by LKemuel Watson, Melvin Terrell, Doris Wright, Fred Bonner II, Michael Cuyjet, James Gold, Donna Rudy and Dawn Person), reviewed by Joshua Canada Excerpts from Breathe: Finding Freedom to Thrive in Relationships after Childhood Sexual Abuse, Nicole Braddock Bromley ReflectionsMy Journey into Student Affairs, Kim Stave FeaturesThe President\u27s Corner Editor\u27s Deskhttps://pillars.taylor.edu/acsd_koinonia/1079/thumbnail.jp

Development of an operational high refractive index resist for 193nm immersion lithography

Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch node. For Gen-3 lithography to be successful, however, there must be major breakthroughs in materials development: The hope of obtaining numerical aperture imaging 1.70 is dependent on a high index lens, fluid, and resist. Assuming that a fluid and a lens will be identified, this paper focuses on a possible path to a high index resist. Simulations have shown that the index of the resist should be 1.9 with any index higher than 1.9 leading to an increased process latitude. Creation of a high index resist from conventional chemistry has been shown to be unrealistic. The answer may be to introduce a high index, polarizable material into a resist that is inert relative to the polymer behavior, but will this too degrade the performance of the overall system? The specific approach is to add very high index (~2.9) nanoparticles to an existing resist system. These nanoparticles have a low absorbance; consequently the imaging of conventional 193nm resists does not degrade. Further, the nanoparticles are on the order of 3nm in diameter, thus minimizing any impact on line edge roughness (LER)

Spin diffusion in doped semiconductors

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous distributions of both electrons and holes, in a doped semiconductor a single-band disturbance is possible. For n-doped nonmagnetic semiconductors the enhancement of diffusion due to a degenerate electron sea in the conduction band is much larger for these single-band spin packets than for charge packets, and can exceed an order of magnitude at low temperatures even for equilibrium dopings as small as 10^16 cm^-3. In n-doped ferromagnetic and semimagnetic semiconductors the motion of spin packets polarized antiparallel to the equilibrium carrier spin polarization is predicted to be an order of magnitude faster than for parallel polarized spin packets. These results are reversed for p-doped semiconductors.Comment: 8 pages, 4 figure